| 000 | 00859nam a22002537a 4500 | ||
|---|---|---|---|
| 005 | 20170124110207.0 | ||
| 010 | _aB-025942 | ||
| 020 |
_c395.00 _a8120316827 |
||
| 035 | _aB-025942 | ||
| 037 | _bCen Lib/Ret | ||
| 040 |
_aDPL _bEN |
||
| 082 |
_a621.3815 _bBAK |
||
| 100 |
_aBaker, R Jacob _937611 |
||
| 245 |
_aCMOS : _cby R. Jacob Baker , Harry W. Li [and] David E. Boyce _bcircuit design, layout, and simulation |
||
| 260 |
_aNew Delhi _bPrentice Hall of India _c2000 |
||
| 270 |
_aM-97, Connaught Circus _bNew Delhi _e110001 |
||
| 300 |
_a902p. _c21cm(Hb) |
||
| 500 | _aIncludes appendix and index | ||
| 650 |
_aMachanical engineering _99987 |
||
| 650 |
_aMetal oxide semiconductor field-effect transistors _937612 |
||
| 700 |
_aLi, Harry W. _937613 |
||
| 700 |
_aBoyce, David E. _937614 |
||
| 942 |
_2ddc _cEN _h621.3815 _mBAK |
||
| 999 |
_c133325 _d133325 |
||